? semiconductor components industries, llc, 2000 october, 2000 rev. 1 1 publication order number: mur8100e/d mur8100e, mur880e mur8100e is a preferred device switchmode ? power rectifiers ultrafast ae'' series with high reverse energy capability . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these stateoftheart devices have the following features: ? 20 mjoules avalanche energy guaranteed ? excellent protection against voltage transients in switching inductive load circuits ? ultrafast 75 nanosecond recovery time ? 175 c operating junction temperature ? popular to220 package ? epoxy meets ul94, v o @ 1/8 ? low forward voltage ? low leakage current ? high temperature glass passivated junction ? reverse voltage to 1000 volts mechanical characteristics: ? case: epoxy, molded ? weight: 1.9 grams (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c max. for 10 seconds ? shipped 50 units per plastic tube ? marking: u880e, u8100e maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage mur880e mur8100e v rrm v rwm v r 800 1000 v average rectified forward current (rated v r , t c = 150 c) total device i f(av) 8.0 a peak repetitive forward current (rated v r , square wave, 20 khz, t c = 150 c) i fm 16 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 100 a operating junction and storage temperature range t j , t stg 65 to +175 c device package shipping ordering information mur8100e to220 http://onsemi.com to220ac case 221b plastic 50 units/rail 3 4 1 ultrafast rectifiers 8.0 amperes 8001000 volts marking diagram u8x0e u8x0e = device code x = 8 or 10 mur880e to220 50 units/rail preferred devices are recommended choices for future use and best overall value. 1 3 4
mur8100e, mur880e http://onsemi.com 2 thermal characteristics characteristic symbol value unit maximum thermal resistance, junction to case r q jc 2.0 c/w electrical characteristics characteristic symbol mur880e mur8100e unit maximum instantaneous forward voltage (note 1.) (i f = 8.0 amps, t c = 150 c) (i f = 8.0 amps, t c = 25 c) v f 1.5 1.8 volts maximum instantaneous reverse current (note 1.) (rated dc voltage, t c = 100 c) (rated dc voltage, t c = 25 c) i r 500 25 m a maximum reverse recovery time (i f = 1.0 amp, di/dt = 50 amps/ m s) (i f = 0.5 amp, i r = 1.0 amp, i rec = 0.25 amp) t rr 100 75 ns controlled avalanche energy (see test circuit in figure 6. ) w aval 20 mj 1. pulse test: pulse width = 300 m s, duty cycle 2.0%.
mur8100e, mur880e http://onsemi.com 3 * the curves shown are typical for the highest voltage device in the voltage * grouping. typical reverse current for lower voltage selections can be * estimated from these same curves if v r is sufficiently below rated v r . figure 1. typical forward voltage figure 2. typical reverse current* figure 3. current derating, case figure 4. current derating, ambient figure 5. power dissipation 1.8 0.4 v f , instantaneous voltage (volts) 100 50 5.0 10 3.0 v r , reverse voltage (volts) 0 10 0.1 0.01 t c , case temperature ( c) 150 140 10 3.0 2.0 1.0 0 20 60 0 t a , ambient temperature ( c) 8.0 6.0 4.0 2.0 0 i f(av) , average forward current (amps) 1.0 0 14 10 8.0 2.0 0 4.0 40 i f , instantaneous forward current (amps) i i 0.7 0.5 1.2 0.8 1.0 1.4 1.6 200 400 600 800 1000 1.0 100 10,000 170 180 , average forward current (amps) i f(av) 80 120 100 10 2.0 3.0 5.0 6.0 p f(av) , average power dissipation (watts) 2.0 20 0.1 0.3 7.0 1.0 30 , reverse current ( a) r 160 140 160 200 180 , average forward current (amps) f(av) 6.0 5.0 4.0 9.0 8.0 7.0 6.0 9.0 7.0 8.0 10 7.0 5.0 3.0 1.0 9.0 t j = 175 c square wave dc rated v r applied square wave dc t j = 25 c 100 c 150 c t j = 175 c 25 c 100 c 70 0.2 1000 4.0 12 r ja = 16 c/w r ja = 60 c/w (no heat sink) square wave dc square wave dc 0.6 175 c
mur8100e, mur880e http://onsemi.com 4 t 0 t 1 t 2 t v dd i d i l bv dut mercury switch figure 6. test circuit figure 7. currentvoltage waveforms +v dd dut 40 h coil v d i l s 1 i d the unclamped inductive switching circuit shown in figure 6. was used to demonstrate the controlled avalanche capability of the new ae'' series ultrafast rectifiers. a mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. when s 1 is closed at t 0 the current in the inductor i l ramps up linearly; and energy is stored in the coil. at t 1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt ef fects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at bv dut and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t 2 . by solving the loop equation at the point in time when s 1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the v dd power supply while the diode is in breakdown (from t 1 to t 2 ) minus any losses due to finite component resistances. assuming the component resistive elements are small equation (1) approximates the total energy transferred to the diode. it can be seen from this equation that if the v dd voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when s 1 was closed, equation (2). the oscilloscope picture in figure 8. , shows the mur8100e in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 volts, and using equation (2) the energy absorbed by the mur8100e is approximately 20 mjoules. although it is not recommended to design for this condition, the new ae'' series provides added protection against those unforeseen transient viruses that can produce unexplained random failures in unfriendly environments. w aval 1 2 li 2 lpk bv dut bv dut v dd w aval 1 2 li 2 lpk figure 8. currentvoltage waveforms channel 2 : i l 0.5 amps/div. channel 1 : v dut 500 volts/div. time base : 20 s/div. equation (1): equation (2): ch1 ch2 ref ref ch1 ch2 acquisitions saveref source 1 217:33 hrs stack a20 s 953 v vert 500v 50mv
mur8100e, mur880e http://onsemi.com 5 t, time (ms) 100 1.0 0.5 0.07 0.05 0.01 v r , reverse voltage (volts) 10 1.0 1000 300 100 30 10 c, capacitance (pf) 2.0 5.0 10 20 50 0.3 0.7 1.0 100 r(t), transient thermal resistance 0.2 0.1 0.03 0.02 0.01 0.02 0.05 0.1 0.2 0.5 200 500 1000 t j = 25 c (normalized) figure 9. thermal response figure 10. typical capacitance d = 0.5 0.1 0.05 0.01 single pulse z q jc (t) = r(t) r q jc r q jc = 1.5 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2
mur8100e, mur880e http://onsemi.com 6 package dimensions to220 twolead case 221b04 issue d b r j d g l h q t u a k c s 4 13 dim min max min max millimeters inches a 0.595 0.620 15.11 15.75 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.82 d 0.025 0.035 0.64 0.89 f 0.142 0.147 3.61 3.73 g 0.190 0.210 4.83 5.33 h 0.110 0.130 2.79 3.30 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.14 1.52 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.14 1.39 t 0.235 0.255 5.97 6.48 u 0.000 0.050 0.000 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. f
mur8100e, mur880e http://onsemi.com 7 notes
mur8100e, mur880e http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mur8100e/d switchmode is a trademark of semiconductor components industries, llc. north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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